ONSEMI HGTG40N60A4 Datasheet & Stock

The HGTG40N60A4 is a N-channel IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.




1.7V Low saturation voltage @ IC = 40A

55ns Fall time @ TJ = 125°C

625W Total power dissipation @ TC = 25°C





Applications


Power Management,

Maintenance & Repair