ONSEMI 1N5821G Datasheet & Stock

The 1N5821G is an axial-lead Schottky Barrier Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.




Cathode indicated by polarity band

Extremely low VF

Low power loss/high efficiency

Low stored charge, majority carrier conduction

All external surfaces corrosion-resistant





Applications


Power Management,

Industrial





Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.